About the job
Embark on a transformative career journey with ASM, where state-of-the-art technology converges with a culture of collaboration.
For over 55 years, ASM has consistently been at the cutting edge of innovation, shaping the future of technology. With a dynamic workforce of over 4,500 ASMers from 70 different nationalities, our advanced semiconductor devices are pivotal in driving trends such as 5G, cloud computing, artificial intelligence, and autonomous driving. Yet, we pride ourselves on being more than a technology company; we are deeply committed to diversity, inclusion, and sustainability, striving to make a meaningful impact on the world. Our comprehensive development programs are designed to foster your growth, expand your potential, and push the boundaries of innovation.
Internship Responsibilities
The Process Engineering Intern will investigate leakage mechanisms in flowable low-k SiOCH films, employing I-V measurements and structural analysis techniques such as FTIR and XPS. This project emphasizes correlating material structure with leakage behavior, strictly adhering to ASM’s intellectual property protection protocols by utilizing generalized or literature-based conditions.
Working with dummy samples that mimic typical low-k films (SiOCH-based), the intern will conduct I-V and C-V testing to develop leakage models (e.g., Poole-Frenkel, tunneling) and utilize FTIR/XPS for assessing bonding states and material composition. The experimental setup will follow a two-factor Design of Experiments (DOE), focusing on parameters like temperature and cure time. Analysis will center on model fitting and the relationship between structural and electrical properties, ensuring all deliverables are reviewed and anonymized to protect sensitive content.
